HM5316123B Datasheet, PDF (20/50 Pages) Elpida Memory – 131,072-word x 16-bit Multiport CMOS Video RAM

HM5316123B Series
AC Characteristics (Ta = 0 to +70°C, V_CC = 5 V ± 10%, V_SS = 0 V) ^{*1, *16}
Test Conditions
– Input rise and fall times: 5ns
– Input pulse levels: VSS to 3.0 V
– Input timing reference levels: 0.8 V, 2.4 V
– Output timing reference levels: 0.8 V, 2.0 V
– Output load: RAM 1TTL+CL(50PF)
SAM, QSF 1TTL+CL(30PF)
(Including scope and jig)
Common Parameter
HM5316123B
——————————————
-7
-8
-10
———— ———— ————
Parameter
Symbol Min Max Min Max Min Max Unit Notes
—————————————————————————————————————————
Random read or write cycle time t_RC
130 — 150 — 180 — ns
—————————————————————————————————————————
RAS precharge time
t_RP
50 — 60 — 70 — ns
—————————————————————————————————————————
RAS pulse width
t_RAS
70 10000 80 10000 100 10000 ns
—————————————————————————————————————————
CAS pulse width
t_CAS
20 — 20 — 25 — ns
—————————————————————————————————————————
Row address setup time
t_ASR
0 — 0 — 0 — ns
—————————————————————————————————————————
Row address hold time
t_RAH
10 — 10 — 10 — ns
—————————————————————————————————————————
Column address setup time
t_ASC
0 — 0 — 0 — ns
—————————————————————————————————————————
Column address hold time
t_CAH
12 — 15 — 15 — ns
—————————————————————————————————————————
RAS to CAS delay time
t_RCD
20 50 20 60 20 75 ns 2
—————————————————————————————————————————
RAS hold time referenced to CAS t_RSH
20 — 20 — 25 — ns
—————————————————————————————————————————
CAS hold time referenced to RAS t_CSH
70 — 80 — 100 — ns
—————————————————————————————————————————
CAS to RAS precharge time
t_CRP
10 — 10 — 10 — ns
—————————————————————————————————————————
Preliminary Data Sheet E0160H10
20