EBE10UE8AEWA Datasheet, PDF (19/30 Pages) Elpida Memory – 1GB Unbuffered DDR2 SDRAM DIMM

EBE10UE8AEWA
Speed bin
Parameter
Read postamble
Active to precharge command
Active to auto-precharge delay
Active bank A to active bank B command
period
Four active window period
/CAS to /CAS command delay
Write recovery time
Symbol
tRPST
tRAS
tRAP
tRRD
tFAW
tCCD
tWR
Auto precharge write recovery + precharge
time
tDAL
Internal write to read command delay
tWTR
Internal read to precharge command delay tRTP
Exit self-refresh to a non-read command tXSNR
Exit self-refresh to a read command
tXSRD
Exit precharge power down to any non-read
command
tXP
Exit active power down to read command tXARD
Exit active power down to read command _tXARDS
(slow exit/low power mode)
CKE minimum pulse width (high and low
pulse width)
tCKE
Output impedance test driver delay
tOIT
MRS command to ODT update delay
Auto-refresh to active/auto-refresh
command time
Average periodic refresh interval
(0°C ≤ TC ≤ +85°C)
(+85°C < TC ≤ +95°C)
tMOD
tRFC
tREFI
tREFI
Minimum time clocks remains ON after CKE
asynchronously drops low
tDELAY
-8G
DDR2-800 (6-6-6)
min.
max.
0.4
45
tRCD min.
0.6
70000

7.5

35

2

15

WR +
RU (tRP/ 
tCK (avg))
7.5

7.5

tRFC + 10 
200

2

2

8 − AL

3

0
12
0
12
127.5


7.8

3.9
tIS +
tCK(avg) + 
tIH
-6E
DDR2-667 (5-5-5)
min.
max.
0.4
45
tRCD min.
0.6
70000

7.5

37.5

2

15

WR +
RU (tRP/ 
tCK (avg))
7.5

7.5

tRFC + 10 
200

2

2

7 − AL

3

0
12
0
12
127.5


7.8

3.9
tIS +
tCK(avg) + 
tIH
Unit
Notes
tCK (avg) 12
ns
ns
ns
ns
nCK
ns
nCK
1, 9
ns
14
ns
ns
nCK
nCK
nCK
3
nCK
2, 3
nCK
ns
ns
ns
µs
µs
ns
Preliminaly Data Sheet E1293E10 (Ver. 1.0)
19