HB52R1289E22 Datasheet, PDF(14/18 Page) Elpida Memory – 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M × 4 Components) PC100 SDRAM

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HB52R1289E22 Datasheet, PDF (14/18 Pages) Elpida Memory – 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M × 4 Components) PC100 SDRAM

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HB52R1289E22-A6B/B6B

Relationship Between Frequency and Minimum Latency

Parameter

Frequency (MHz)

tCK (ns)

Active command to column command (same bank)

Active command to active command (same bank)

Active command to precharge command (same bank)

Precharge command to active command (same bank)

Write recovery or data-in to precharge command

(same bank)

Active command to active command (different bank)

Self refresh exit time

Last data in to active command

(Auto precharge, same bank)

Self refresh exit to command input

Precharge command to high impedance

(CE latency = 3)

(CE latency = 4)

Last data out to active command (auto precharge)

(same bank)

Last data out to precharge (early precharge)

(CE latency = 3)

(CE latency = 4)

Column command to column command

Write command to data in latency

DQMB to data in

DQMB to data out

CKE to CK disable

S to command disable

Power down exit to command input

Burst stop to output valid data hold

(CE latency = 3)

(CE latency = 4)

HB52R1289E22

-A6B/B6B

PC100

Symbol Symbol 10

Notes

I RCD

I RC

= [IRAS + IRP]

I RAS

I RP

I DPL

Tdpl 2

I RRD

I SREX

Tsrx

I APW

Tdal 4

= [IDPL + IRP]

I SEC

= [IRC]

I HZP

I APR

I EP

I CCD

I WCD

I DID

I DOD

I CLE

I RSA

I CDD

I PEC

I BSR

Troh 3

Troh 4

â2

â3

Tccd 1

Tdwd 1

Tdqm 1

Tdqz 3

Tcke 2

Tmrd 1

Data Sheet E0017H20

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