EBE11UD8ABFA Datasheet, PDF (14/22 Pages) Elpida Memory – 1GB Unbuffered DDR2 SDRAM DIMM (128M words x 64 bits, 2 Ranks)

EBE11UD8ABFA
ODT DC Electrical Characteristics (TC = 0 to +85°C, VDD, VDDQ = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Rtt effective impedance value for EMRS (A6, A2) = 0, 1; 75 Ω
Rtt effective impedance value for EMRS (A6, A2) = 1, 0; 150 Ω
Deviation of VM with respect to VDDQ/2
Note: 1. Test condition for Rtt measurements.
Symbol
Rtt1(eff)
Rtt2(eff)
∆VM
min. typ.
60
75
120
150
−3.75 
max. Unit
90
Ω
180
Ω
+3.75 %
Note
1
1
1
Measurement Definition for Rtt(eff)
Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively.
VIH(AC), and VDDQ values defined in SSTL_18.
Rtt(eff) =
VIH(AC) − VIL(AC)
I(VIH(AC)) − I(VIL(AC))
Measurement Definition for ∆VM
Measure voltage (VM) at test pin (midpoint) with no load.
∆VM =
2 × VM
VDDQ
− 1 × 100%
OCD Default Characteristics (TC = 0 to +85°C, VDD, VDDQ = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
min.
typ.
max.
Unit
Notes
Output impedance
12.6
18
23.4
Ω
1
Pull-up and pull-down mismatch
0

4
Ω
1, 2
Output slew rate
1.5

4.5
V/ns
3, 4
Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT−VDDQ)/IOH must be less than 23.4Ω for values of VOUT between VDDQ and VDDQ−280mV.
Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/IOL must be less than 23.4Ω for values of VOUT between 0V and 280mV.
2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and
voltage.
3. Slew rate measured from VIL(AC) to VIH(AC).
4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate
as measured from AC to AC. This is guaranteed by design and characterization.
Pin Capacitance (TA = 25°C, VDD = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
Pins
max.
min.
Input capacitance
CI1
Address, /RAS, /CAS,
/WE, /CS, CKE, ODT
1
2
Input capacitance
CI2
CK, /CK
1
2
Data and DQS input/output
capacitance
CO
DQ, DQS, /DQS, DM 3
4
Unit
Note
pF
pF
pF
Data Sheet E0365E50 (Ver. 5.0)
14