EBJ10EE8BAWA Datasheet, PDF (12/18 Pages) Elpida Memory – 1GB Unbuffered DDR3 SDRAM DIMM

EBJ10EE8BAWA
DC Characteristics 1 (TC = 0°C to +85°C, VDD = 1.5V ± 0.075V, VSS = 0V)
Parameter
Operating current
(ACT-PRE)
Symbol
IDD0
Operating current
(ACT-READ-PRE)
IDD1
Precharge power-down standby current
IDD2PF
IDD2PS
Precharge quiet standby current
IDD2Q
Precharge standby current
Active power-down current
(Always fast exit)
Active standby current
Operating current
(Burst read operating)
Operating current
(Burst write operating)
Burst refresh current
IDD2N
IDD3P
IDD3N
IDD4R
IDD4W
IDD5B
All bank interleave read current
IDD7R
Data rate (Mbps) max.
1333
1066
800
1080
990
900
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1260
1125
1035
360
315
270
126
117
108
630
540
450
675
585
495
405
360
315
765
675
585
1980
1620
1260
2160
1800
1440
3015
2835
2655
3105
2565
2340
Self-Refresh Current (TC = 0°C to +85°C, VDD = 1.5V ± 0.075V)
Parameter
Symbol
max.
Unit
Self-refresh current
normal temperature range
Self-refresh current
extended temperature range
IDD6
90
mA
IDD6ET
162
mA
Auto self-refresh current
IDD6TC
162
mA
Unit
Notes
mA
mA
mA
Fast PD Exit
mA
Slow PD Exit
mA
mA
mA
mA
mA
mA
mA
mA
Notes
Data Sheet E1368E30 (Ver. 3.0)
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