HM5112805FLTD-6 Datasheet, PDF (11/32 Pages) Elpida Memory – 128M EDO DRAM (16-Mword × 8-bit) 8k refresh/4k refresh

HM5112805FLTD-6, HM5113805FLTD-6
Read Cycle
Parameter
Access time from RAS
Access time from CAS
Access time from address
Access time from OE
Read command setup time
Read command hold time to CAS
Read command hold time from RAS
Read command hold time to RAS
Column address to RAS lead time
Column address to CAS lead time
CAS to output in low-Z
Output data hold time
Output data hold time from OE
Output buffer turn-off time
Output buffer turn-off to OE
CAS to Din delay time
Output data hold time from RAS
Output buffer turn-off to RAS
Output buffer turn-off to WE
WE to Din delay time
RAS to Din delay time
HM5112805FL/HM5113805FL
-6
Symbol Min
Max
t _RAC
—
60
t _CAC
—
15
t _AA
—
30
t _OEA
—
15
t _RCS
0
—
t _RCH
0
—
t _RCHR
60
—
t _RRH
0
—
t _RAL
30
—
t _CAL
18
—
t _CLZ
0
—
t _OH
3
—
t _OHO
3
—
t _OFF
—
15
t _OEZ
—
15
t _CDD
15
—
t _OHR
3
—
t _OFR
—
15
t _WEZ
—
15
t _WED
15
—
t _RDD
15
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
8, 9
9, 10, 17
9, 11, 17
9
12
12
21
13, 21
13
5
21
13, 21
13
Data Sheet E0176H10
11