MC-4R512FKE8D Datasheet, PDF (10/14 Pages) Elpida Memory – Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)

MC-4R512FKE8D
RIMM Module Current Profile
IDD
IDD1
RIMM module power conditions ^Note1
One RDRAM in Read ^Note2, balance in NAP mode
-845
MAX.
Unit
693
mA
-745
643
IDD2
One RDRAM in Read ^Note2, balance in Standby mode
-653
-845
583
1980
mA
-745
1780
IDD3
One RDRAM in Read ^Note2, balance in Active mode
-653
-845
1570
2655
mA
-745
2455
IDD4
One RDRAM in Write, balance in NAP mode
-653
-845
2245
783
mA
-745
733
IDD5
One RDRAM in Write, balance in Standby mode
-653
-845
683
2070
mA
-745
1870
IDD6
One RDRAM in Write, balance in Active mode
-653
-845
1670
2745
mA
-745
2545
-653
2345
Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage
patterns. Power does not include Refresh Current.
2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA or 290
mA for x18 ECC module for the following : VDD = 2.5 V, VTERM = 1.8 V, VREF = 1.4 V and VDIL = VREF − 0.5 V.
10
Data Sheet E0076N20 (Ver 2.0)