MC-4R64FKE8S-840 Datasheet, PDF (1/14 Pages) Elpida Memory – Direct Rambus DRAM SO-RIMM Module

DATA SHEET
Direct Rambus DRAM SO-RIMM^TM Module
MC-4R64FKE8S-840 (32M words × 18 bits)
Description
The Direct Rambus SO-RIMM module is a general-
purpose high-performance memory module subsystem
suitable for use in a broad range of applications
including computer memory, mobile personal
computers, networking systems, and other applications
where high bandwidth and low latency are required.
MC-4R64FKE8S modules consists of two 288M Direct
Rambus DRAM (Direct RDRAM) devices
(µPD488588). These are extremely high-speed CMOS
DRAMs organized as 16M words by 18 bits. The use
of Rambus Signaling Level (RSL) technology permits
800MHz transfer rates while using conventional system
and board design technologies.
Features
• 160 edge connector pads with 0.65mm pad spacing
• 64MB Direct RDRAM storage
• Each RDRAM^ has 32 banks, for 64 banks total on
module
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5V supply
• Powerdown self refresh modes
• Separate Row and Column buses for higher
efficiency
Direct RDRAM devices are capable of sustained data
transfers at 1.25ns per two bytes (10ns per 16 bytes).
The architecture of the Direct RDRAM enables the
highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The
separate control and data buses with independent row
and column control yield high bus efficiency. The
Direct RDRAM's multi-bank architecture supports up to
four simultaneous transactions per device.
Document No. E0259N20 (Ver. 2.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory,Inc. 2002
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.