EDS12322GBH-TT Datasheet, PDF (1/51 Pages) Elpida Memory – 128M bits SDRAM WTR (Wide Temperature Range)

PRELIMINARY DATA SHEET
128M bits SDRAM
WTR (Wide Temperature Range)
EDS12322GBH-TT (4M words × 32 bits)
Specifications
• Density: 128M bits
• Organization
 1M words × 32 bits × 4 banks
• Package: 90-ball FBGA
 Lead-free (RoHS compliant) and Halogen-free
• Power supply: VDD, VDDQ = 1.8V ± 0.1V
• Clock frequency: 166MHz/133MHz (max.)
• 1KB page size
 Row address: A0 to A11
 Column address: A0 to A7
• Four internal banks for concurrent operation
• Interface: LVCMOS
• Burst lengths (BL): 1, 2, 4, 8, full page
• Burst type (BT):
 Sequential (1, 2, 4, 8, full page)
 Interleave (1, 2, 4, 8)
• /CAS Latency (CL): 3
• Precharge: auto precharge option for each burst
access
• Driver strength: half, quarter
• Refresh: auto-refresh, self-refresh
• Refresh cycles: 4096 refresh cycles/64ms
• Operating ambient temperature range
 TA = –20°C to +85°C
Features
• ×32 organization
• Single pulsed /RAS
• Burst read/write operation and burst read/single write
operation capability
• Byte control by DQM
• Wide temperature range
 TA = –20°C to +85°C
Ordering Information
Part number
EDS12322GBH-6DTT-F
EDS12322GBH-7BTT-F
Organization
(words × bits)
4M × 32
Internal Banks
4
Clock frequency
MHz (max.)
166
133
/CAS latency
3
Package
90-ball FBGA
Document No. E1347E20 (Ver. 2.0)
Date Published December 2008 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2008