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EDE2508ABSE-GE Datasheet, PDF (1/66 Pages) Elpida Memory – 256M bits DDR2 SDRAM for HYPER DIMM | |||
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PRELIMINARY DATA SHEET
256M bits DDR2 SDRAM
for HYPER DIMM
EDE2508ABSE-GE (32M words à 8 bits)
EDE2516ABSE-GE (16M words à 16 bits)
Description
The EDE2508ABSE is a 256M bits DDR2 SDRAM
organized as 8,388,608 words à 8 bits à 4 banks.
It is packaged in 60-ball FBGA (µBGA) package.
The EDE2516ABSE is a 256M bits DDR2 SDRAM
organized as 4,194,304 words à 16 bits à 4 banks.
It is packaged in 84-ball FBGA (µBGA) package.
Features
⢠Power supply: VDD, VDDQ = 1.85V ± 0.1V
⢠Double-data-rate architecture: two data transfers per
clock cycle
⢠Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
⢠DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
⢠Differential clock inputs (CK and /CK)
⢠DLL aligns DQ and DQS transitions with CK
transitions
⢠Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
⢠Four internal banks for concurrent operation
⢠Data mask (DM) for write data
⢠Burst lengths: 4, 8
⢠/CAS Latency (CL): 5
⢠Auto precharge operation for each burst access
⢠Auto refresh and self refresh modes
⢠Average refresh period
 7.8µs at 0°C ⤠TC ⤠+85°C
 3.9µs at +85°C < TC ⤠+95°C
⢠SSTL_18 compatible I/O
⢠Posted CAS by programmable additive latency for
better command and data bus efficiency
⢠Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
⢠Programmable RDQS, /RDQS output for making à 8
organization compatible to à 4 organization
⢠/DQS, (/RDQS) can be disabled for single-ended
Data Strobe operation.
⢠FBGA (µBGA) package with lead free solder
(Sn-Ag-Cu)
Document No. E0657E20 (Ver. 2.0)
Date Published May 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2005
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