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EDE2116ABSE Datasheet, PDF (1/81 Pages) Elpida Memory – 2G bits DDR2 SDRAM | |||
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PRELIMINARY DATA SHEET
2G bits DDR2 SDRAM
EDE2116ABSE (128M words à 16 bits)
Specifications
Features
⢠Density: 2G bits
⢠Organization
⯠16M words à 16 bits à 8 banks
⢠Package
⯠92-ball FBGA
⯠Lead-free (RoHS compliant)
⢠Power supply: VDD, VDDQ = 1.8V ± 0.1V
⢠Data rate
⯠800Mbps/667Mbps/533Mbps (max.)
⢠2KB page size
⯠Row address: A0 to A13
⯠Column address: A0 to A9
⢠Eight internal banks for concurrent operation
⢠Interface: SSTL_18
⢠Burst lengths (BL): 4, 8
⢠Burst type (BT):
⯠Sequential (4, 8)
⯠Interleave (4, 8)
⢠/CAS Latency (CL): 3, 4, 5, 6
⢠Precharge: auto precharge option for each burst
access
⢠Driver strength: normal/weak
⢠Refresh: auto-refresh, self-refresh
⢠Refresh cycles: 8192 cycles/64ms
⯠Average refresh period
7.8μs at 0°C ⤠TC ⤠+85°C
3.9μs at +85°C < TC ⤠+95°C
⢠Operating case temperature range
⯠TC = 0°C to +95°C
⢠Double-data-rate architecture; two data transfers per
clock cycle
⢠The high-speed data transfer is realized by the 4 bits
prefetch pipelined architecture
⢠Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
⢠DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
⢠Differential clock inputs (CK and /CK)
⢠DLL aligns DQ and DQS transitions with CK
transitions
⢠Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
⢠Data mask (DM) for write data
⢠Posted /CAS by programmable additive latency for
better command and data bus efficiency
⢠Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
⢠/DQS can be disabled for single-ended Data Strobe
operation
Document No. E1292E10 (Ver. 1.0)
Date Published March 2008 (K) Japan
Printed in Japan
URL: http://www.elpida.com
©Elpida Memory, Inc. 2008
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