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EDD5108AGTA-4 Datasheet, PDF (1/50 Pages) Elpida Memory – 512M bits DDR SDRAM | |||
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DATA SHEET
512M bits DDR SDRAM
EDD5108AGTA-4 (64M words à 8 bits)
EDD5116AGTA-4 (32M words à 16 bits)
Specifications
⢠Density: 512M bits
⢠Organization
⯠16M words à 8 bits à 4 banks (EDD5108AGTA)
⯠8M words à 16 bits à 4 banks (EDD5116AGTA)
⢠Package: 66-pin plastic TSOP (II)
⯠Lead-free (RoHS compliant)
⢠Power supply: VDD, VDDQ = 2.5V ± 0.125V
⢠Data rate: 500Mbps (max.)
⢠Four internal banks for concurrent operation
⢠Interface: SSTL_2
⢠Burst lengths (BL): 2, 4, 8
⢠Burst type (BT):
⯠Sequential (2, 4, 8)
⯠Interleave (2, 4, 8)
⢠/CAS Latency (CL): 3
⢠Precharge: auto precharge option for each burst
access
⢠Driver strength: normal/weak
⢠Refresh: auto-refresh, self-refresh
⢠Refresh cycles: 8192 cycles/64ms
⯠Average refresh period: 7.8μs
⢠Operating ambient temperature range
⯠TA = 0°C to +70°C
Features
⢠Double-data-rate architecture; two data transfers per
clock cycle
⢠The high-speed data transfer is realized by the 2 bits
prefetch pipelined architecture
⢠Bi-directional data strobe (DQS) is transmitted
/received with data for capturing data at the receiver
⢠Data inputs, outputs, and DM are synchronized with
DQS
⢠DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
⢠Differential clock inputs (CK and /CK)
⢠DLL aligns DQ and DQS transitions with CK
transitions
⢠Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
⢠Data mask (DM) for write data
Document No. E1195E20 (Ver. 2.0)
Date Published February 2008 (K) Japan
Printed in Japan
URL: http://www.elpida.com
©Elpida Memory, Inc. 2007-2008
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