ECS2516AFCN-A Datasheet, PDF (1/48 Pages) Elpida Memory – 256M bits SDRAM Bare Chip

PRELIMINARY DATA SHEET
256M bits SDRAM Bare Chip
ECS2516AFCN-A (16M words × 16 bits) _{Specifications}
• Density: 256M bits
• Organization
 4M words × 16 bits × 4 banks
E• Package: Bare chip
• Power supply: VDD, VDDQ = 3.3V ± 0.3V
• Clock frequency: 133MHz (max.)
• Four internal banks for concurrent operation
O• Interface: LVTTL
• Burst lengths (BL): 1, 2, 4, 8, full page
• Burst type (BT):
 Sequential (1, 2, 4, 8, full page)
 Interleave (1, 2, 4, 8)
L _{• /CAS Latency (CL): 2, 3}
• Precharge: auto precharge option for each burst
access
• Refresh: auto-refresh, self-refresh
• Refresh cycles: 8192 cycles/64ms
P ^{ Average refresh period: 7.8µs}
• Operating ambient temperature range
roduct ^{ TA=0°Cto+85°C}
Features
• Single pulsed /RAS
• Burst read/write operation and burst read/single write
operation capability
• Byte control by UDQM and LDQM
Document No. E0986E20 (Ver. 2.0)
Date Published March 2007 (K) Japan
Printed in Japan
URL: http://www.elpida.com
This product became EOL in April, 2010.
Elpida Memory, Inc. 2007