EBR51EC8ABFD Datasheet, PDF (1/12 Pages) Elpida Memory – 512MB Direct Rambus™ DRAM RIMM™ Module

DATA SHEET
512MB Direct Rambus DRAM RIMM Module
EBR51EC8ABFD (256M words × 18 bits) _Description
The Direct Rambus RIMM module is a general-purpose
high-performance memory module subsystem suitable
for use in a broad range of applications including
computer memory, personal computers, workstations,
Eand other applications where high bandwidth and low
latency are required.
The EBR51EC8ABFD consists of 16 pieces of 288M
O_{Direct Rambus DRAM (Direct RDRAM) devices.}
These are extremely high-speed CMOS DRAMs
organized as 16M words by 18 bits. The use of
Rambus Signaling Level (RSL) technology permits
L ^{1066MHz or 800MHz transfer rates while using}
Features
• 512MB Direct RDRAM storage and 512 banks total
on module
• High speed 1066MHz/800MHz Direct RDRAM
devices
• 184 edge connector pads with 1mm pad spacing
 Module PCB size: 133.35mm × 34.925mm ×
1.27mm
 Gold plated edge connector pads contacts
• Serial Presence Detect (SPD) support
• Operates from a 2.5V supply
• Low power and power down self refresh modes
• Separate Row and Column buses for higher
conventional system and board design technologies.
The architecture of the Direct RDRAM enables the
highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions.
The separate control and data buses with independent
P row and column control yield over 95% bus efficiency.
The Direct RDRAM device's 32 banks support up to
roduct ^{four simultaneous transactions per device.}
efficiency
• RDRAM^devices use Chip Scale Package (CSP)
 FBGA package
Document No. E0315E21 (Ver. 2.1) _{This product became EOL in April, 2004.}
Date Published March 2006 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2002-2006