EBR25EC8ABSA Datasheet, PDF (1/11 Pages) Elpida Memory – 256MB Direct Rambus DRAM SO-RIMM Module

PRELIMINARY DATA SHEET
256MB Direct Rambus DRAM SO-RIMM Module
EBR25EC8ABSA (128M words × 18 bits) _Description
The Direct Rambus SO-RIMM module is a general-
purpose high-performance memory module subsystem
suitable for use in a broad range of applications
including computer memory, mobile personal
Ecomputers, networking systems and other applications
where high bandwidth and low latency are required.
The EBR25EC8ABSA consists of 8 pieces of 288M
O_{Direct Rambus DRAM (Direct RDRAM) devices.}
These are extremely high-speed CMOS DRAMs
organized as 16M words by 18 bits. The use of
Rambus Signaling Level (RSL) technology permits
L ^{1066MHz or 800MHz transfer rates while using}
Features
• 256MB Direct RDRAM storage and 256 banks total
on module
• High speed 1066MHz/800MHz Direct RDRAM
devices
• 160 edge connector pads with 0.65mm pad spacing
 Module PCB size: 67.60mm × 31.25mm × 1.00mm
 Gold plated edge connector pads contacts
• Serial Presence Detect (SPD) support
• Operates from a 2.5V supply
• Low power and power down self refresh modes
• Separate Row and Column buses for higher
efficiency
conventional system and board design technologies.
The architecture of the Direct RDRAM enables the
highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions.
The separate control and data buses with independent
P row and column control yield over 95% bus efficiency.
The Direct RDRAM's 32 banks support up to four
roduct ^{simultaneous transactions per device.}
• RDRAM^s uses Chip Scale Package (CSP)
 FBGA package
Document No. E0320E11 (Ver. 1.1) _{This product became EOL in March, 2004.}
Date Published March 2006 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2002-2006