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E1922E20 Datasheet, PDF (1/29 Pages) Elpida Memory – 4G bits DDR3L SDRAM | |||
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COVER
DATA SHEET
4G bits DDR3L SDRAM
EDJ4204EFBG (1024M words à 4 bits)
EDJ4208EFBG (512M words à 8 bits)
EDJ4216EFBG (256M words à 16 bits)
Specifications
⢠Density: 4G bits
⢠Organization
â 128M words à 4 bits à 8 banks (EDJ4204EFBG)
â 64M words à 8 bits à 8 banks (EDJ4208EFBG)
â 32M words à 16 bits à 8 banks (EDJ4216EFBG)
⢠Package
â 78-ball FBGA (EDJ4204EFBG, EDJ4208EFBG)
â 96-ball FBGA (EDJ4216EFBG)
â Lead-free (RoHS compliant) and Halogen-free
⢠Power supply: 1.35V (typ)
â VDD = 1.283V to 1.45V
â Backward compatible for VDD, VDDQ
= 1.5V ± 0.075V
⢠Data rate
â 1600Mbps/1333Mbps (max)
⢠1KB page size
â Row address: A0 to A15
â Column address: A0 to A9, A11 (EDJ4204EFBG)
A0 to A9 (EDJ4208EFBG)
⢠2KB page size (EDJ4216EFBG)
â Row address: A0 to A14
â Column address: A0 to A9
⢠Eight internal banks for concurrent operation
⢠Burst length (BL): 8 and 4 with Burst Chop (BC)
⢠Burst type (BT):
â Sequential (8, 4 with BC)
â Interleave (8, 4 with BC)
⢠/CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11
⢠/CAS Write Latency (CWL): 5, 6, 7, 8
⢠Precharge: auto precharge option for each burst
access
⢠Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
⢠Refresh: auto-refresh, self-refresh
⢠Refresh cycles
â Average refresh period
7.8μs at 0°C ⤠TC ⤠+85°C
3.9μs at +85°C < TC ⤠+95°C
⢠Operating case temperature range
â TC = 0°C to +95°C
Features
⢠Double-data-rate architecture: two data transfers per
clock cycle
⢠The high-speed data transfer is realized by the 8 bits
prefetch pipelined architecture
⢠Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
⢠DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
⢠Differential clock inputs (CK and /CK)
⢠DLL aligns DQ and DQS transitions with CK transitions
⢠Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
⢠Data mask (DM) for write data
⢠Posted /CAS by programmable additive latency for
better command and data bus efficiency
⢠On-Die Termination (ODT) for better signal quality
â Synchronous ODT
â Dynamic ODT
â Asynchronous ODT
⢠Multi Purpose Register (MPR) for pre-defined pattern
read out
⢠ZQ calibration for DQ drive and ODT
⢠Programmable Partial Array Self-Refresh (PASR)
⢠/RESET pin for Power-up sequence and reset function
⢠SRT range:
â Normal/extended
⢠Programmable Output driver impedance control
Document. No. E1922E20 (Ver. 2.0)
Date Published May 2013 (K) Japan
Printed in Japan
URL: http://www.elpida.com
ï£Elpida Memory, Inc. 2012-2013
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