E909-06 Datasheet, PDF (8/71 Pages) ELMOS Semiconductor AG – The IC is based on an optical bridge technology which provides a non-mechanical detection of movements.

HALIOS® MULTI PURPOSE SENSOR FOR AUTOMOTIVE
PRODUCTION DATA - NOV 16, 2011
E909.06
3.4.2 SPI Module
No.
Description
Condition Symbol
Min.
Typ.
Max.
Unit
1
SCK pulse low width / pulse
high width
transfer
Tck
4
1/
FSYS
2 First SCK after falling CSB
start of
transfer
Tcs1
2
1/
FSYS
3 Last SCK before rising CSB
end of
transfer
Tcs2
2
1/
FSYS
4 Setup time
Tsetup
1
1/
FSYS
5 Hold time
Thold
1
1/
FSYS
6 Data out after shift
Tso
3
1/
FSYS
7 CSB high time
Tcsh
2
1/
FSYS
8
Data out change from Z to
driven data
start of
transfer
Tz1
1
1/
FSYS
9
Data out change from driven
data to Z
end of
transfer
Tz2
1
1/
FSYS
3.4.3 GPIO Module
No.
Description
1 Threshold point
2 Pull down resistor
3 Output Voltage Low
4 Output Voltage High
5 Low Level Output Current
6 High Level Output Current
7
Tri-State Input/Output
Leakage Current
Condition
Symbol Min.
Typ.
Max. Unit
GPIO_TH
1.2
V_IN > 0.75 · V_DDIO
R_GPIOPD
54
GPIOIOL=4 mA;
V_DDIO=3.3 V
GPIOVOL
GPIOIOH=-4 mA;
V_DDIO=3.3 V
GPIOVOH
2.4
GPIOVOL=0.4V GPIOIOL
6
1.32
1.46
V
130 kΩ
0.4
V
V
12
mA
GPIOVOH=2.4V GPIOIOH -25.6
-7.8 mA
Vout=V_DDIO or 0 V GPIOILC
-1
1
µA
3.4.4 HALIOS® Interface
3.4.4.1 Current Generation for LED Modulators
No.
Description
Condition Symbol
Min.
Typ.
Max.
Unit
1 DAC resolution
N
10
bit
2 Integral non linearity (INL)
3
Differential non linearity
(DNL)
E_i
2
LSB
E_d
2
LSB
4
DAC output voltage at full
scale
V_MAX
1.22
V
ELMOS Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
ELMOS Semiconductor AG
Data Sheet
QM-No.: 25DS0049E.02
8/71