E931.97 Datasheet, PDF (1/7 Pages) ELMOS Semiconductor AG – PIR CONTROLLER INTEGRATED CIRCUIT

MOS (PTY) LTD.
Microsystems On Silicon
Member of ELMOS Semiconductor AG
PIR CONTROLLER INTEGRATED CIRCUIT
PRELIMINARY INFORMATION - JUL 28, 2011
Features
General Description
E931.97
ÿ Digital signal processing
ÿ On chip supply shunt regulator
ÿ Low power consumption
ÿ Differential PIR sensor input
ÿ Excellent power supply rejection
ÿ Insensitive to RF interference
ÿ Inputs for sensitivity, on time and daylight sensor
ÿ Outputs for relay and LED
ÿ Instantaneous settling after power up
Applications
ÿ PIR motion detection
ÿ Intruder detection
ÿ Occupancy detection
ÿ Motion sensor lights
The E931.97 integrated circuit combines all required
functions for a single chip Passive Infra Red (PIR) motion
detector. Motion detection is signaled through the push-
pull REL output. A digital input OEN enables REL output.
A LED output indicates whenever the PIR Signal is above
the selected threshold. The E931.97 interfaces directly
with up to two conventional PIR sensors via a high im-
pedance differential input. The PIR signal is converted to
a 15 bit digital value on chip. The parameters for sensitiv-
ity and timing are set by connecting the corresponding
inputs to DC voltages. The voltage levels on the inputs
are converted to digital values with 7 bit resolution. All
signal processing is performed digitally. The E931.97 is
available in TSSOP-14 and SOIC14 packages.
12V
CON1
2
1
D1
R1
+
C1
C2
V1
PIR1
C3
R2
D2
3.3V
U1
14
ENVREG
VDD
1
R5
9
VDD
OEN
7
REL
2
11
PIRIN
LED
3
R4
12
NPIRIN
SENS
6
R3
ONTIME
5
13
VSS
VSS
4
T931.97-TSSOP-14
R6
RE1A
Q1
L1
CON2
1
2
Q2
VSS
Typical application circuit for Wired Alarm Systems
Comp Typ. Value
Function
U1
E931.97
PIR Controller IC
PIR1 LHI878
Dual Element PIR Sensor
R1
10k
Series voltage drop resistor
R2
100k
Pull down resistor
R3
2.2M
Pull down resistor
R4
22k
Base current setting resistor
R5
22k
Base current setting resistor
R6
1.2k
LED drive current limiting resistor
C1
10uF/6V
Power supply storage capacitor
C2
100nF
Vdd-Vss Supply bypass capacitor
C3
470nF
PIR signal bypass capacitor
RE1 TAA1A12F00 N.O. REL
V1
SMBJ-12
Transorb, voltage spike protection
Q1,Q2 BC849B
NPN transistors for LED & REL drive
D1
1N4007
Supply Reverse connection protector
diode
D2
1N4148
Fly back protection diode
L1
LED
Table 1: Component Values for simple intruder detector (VSupply = 12V)
Note
TSSOP-14 or SOIC-14
TO-5
R1 < (VSupply-0.6-VReg)/(IIDD+ILED/ Q2+IREL/ Q1)
R4 = (VSupply-0.6- VLED)/( ILED/ Q2)
R5 = (VReg-VQ1BE)/(IREL/ Q1)
R6 = (VSupply-0.6- VLED)/( ILED)
Active if no movement is detected
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet
QM-No.: 25DS0070E.00
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