E910.97 Datasheet, PDF (1/9 Pages) ELMOS Semiconductor AG – INTERGRATED CIRCUIT FOR PIR SMART SENSOR

MOS (PTY) LTD.
Microsystems On Silicon
Member of ELMOS Semiconductor AG
INTEGRATED CIRCUIT FOR PIR SMART SENSOR
PRELIMINARY INFORMATION - JUL 28, 2011
Features
General Description
E910.97
ÿ Digital signal processing
ÿ On chip supply shunt regulator
ÿ Low power consumption
ÿ Differential PIR sensor input
ÿ Excellent power supply rejection
ÿ Insensitive to RF interference
ÿ Inputs for sensitivity and on time
Applications
ÿ PIR motion detection
ÿ Intruder detection
ÿ Occupancy detection
ÿ Motion sensor lights
The E910.97 integrated circuit combines all required
functions for a single chip Passive Infra Red (PIR) motion
detector. Motion detection is signaled through the push-
pull REL output. A digital input OEN enables REL output.
The E910.97 interfaces directly to a PIR sensor element
via a high impedance differential input. The PIR signal is
converted to a 15 bit digital value. The parameters for
sensitivity and timing are set by connecting the corre-
sponding inputs to DC voltages. The voltage levels on
the inputs are converted to digital values with 7 bit res-
olution. All signal processing is performed digitally. The
E910.97 is assembled with a pyro-ceramic element in a
hermetically sealed package.
Digital Sensor Assembly with E910.97
The E910.97 PIR Controller results in a single compo-
nent Solution for a Motion Sensor
Traditional analog
PIR Sensor solution
New Smart PIR Detector with E910.97
E910.97A
E910.97A
ADC
BPF
ADC
Comp. &
CAolamrmp. _{E&vent Logic}
Alarm Event Logic
TTeesstt CCoonnttrrooll
LogLicogic
OSC
BBAANNDD GGAAPP _RREEFF
PIN ADC
REL
OEN
VDD
GND
SENS
OONNTTIIMMEE
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet
QM-No.: 25DS0091E.00
1/9