ELM34601AA-N Datasheet, PDF (5/7 Pages) ELM Technology Corporation – Complementary MOSFET

Complementary MOSFET
ELM34601AA-N
■Electrical Characteristics (P-ch)
Ta=25°C. Unless otherwise noted.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V
-30
V
Zero gate voltage drain current
Vds=-24V, Vgs=0V
Idss
Vds=-20V, Vgs=0V, Ta=55°C
-1
μA
-10
Gate-body leakage current
Igss Vds=0V, Vgs=±20V
±100 nA
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=-250μA
-0.8 -1.5 -2.5 V
On state drain current
Id(on) Vgs=-10V, Vds=-5V
-24
A1
Static drain-source on-resistance
Vgs=-10V, Id=-6A
Rds(on)
Vgs=-4.5V, Id=-5A
28 35
mΩ 1
44 60
Forward transconductance
Gfs Vds=-10V, Id=-5A
7
S1
Diode forward voltage
Vsd If=-1A, Vgs=0V
-1 V 1
Max.body-diode continuous current Is
-3 A
Pulsed current
Ism
-6 A 3
DYNAMIC PARAMETERS
Input capacitance
Ciss
970
pF
Output capacitance
Coss Vgs=0V, Vds=-10V, f=1MHz
370
pF
Reverse transfer capacitance
Crss
180
pF
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Vgs=-10V, Vds=-15V
Qgs
Id=-5A
Qgd
28
nC 2
6
nC 2
12
nC 2
Turn-on delay time
td(on)
20
ns 2
Turn-on rise time
tr Vgs=-10V, Vds=-15V
17
ns 2
Turn-off delay time
td(off) Id=-1A, RL=1Ω, Rgen=6Ω
160
ns 2
Turn-off fall time
tf
75
ns 2
Body-diode reverse recovery time
trr If=-5A, dIf/dt=100A/μs
15.5
ns
Body-diode reverse recovery charge Qrr
7.9
nC
NOTE :
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
7-5