ELM51402FA-S Datasheet, PDF (2/5 Pages) ELM Electronics – Single N-channel MOSFET

Single N-channel MOSFET
ELM51402FA-S
■Electrical characteristics
Ta=25°C. Unless otherwise noted.
Parameter
Symbol
Condition
Min. Typ. Max. Unit
STATIC PARAMETERS
Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V
20
V
Zero gate voltage drain current
Idss Vds=20V, Vgs=0V
Ta=85°C
1
μA
5
Gate-body leakage current
Igss Vds=0V, Vgs=±12V
±100 nA
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=250μA
0.4
1.0 V
On state drain current
Id(on) Vgs=4.5V, Vds=5V
1.0
A
Vgs=4.5V, Id=1.8A
240 280
Static drain-source on-resistance Rds(on) Vgs=2.5V, Id=1.5A
300 340 mΩ
Vgs=1.8V, Id=1.2A
600 680
Forward transconductance
Gfs Vds=10V, Id=1.0A
1
S
Diode forward voltage
Vsd Is=1.0A, Vgs=0V
0.65 1.20 V
Max. body-diode continuous current Is
1.0 A
DYNAMIC PARAMETERS
Input capacitance
Ciss
70
pF
Output capacitance
Coss Vgs=0V, Vds=10V, f=1MHz
20
pF
Reverse transfer capacitance
Crss
8
pF
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Vgs=4.5V, Vds=10V
Qgs
Id=1.2A
Qgd
1.06 1.38 nC
0.18
nC
0.32
nC
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
Vgs=4.5V, Vds=10V
tr
RL=20Ω, Id=1.2A
td(off)
Rgen=1Ω
tf
18 26 ns
20 28 ns
70 110 ns
25 40 ns
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