ELM322806A-S Datasheet, PDF (2/4 Pages) ELM Electronics – Single N-channel MOSFET

Single N-channel MOSFET
ELM322806A-S
■Electrical characteristics
Ta=25°C. Unless otherwise noted.
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V
60
V
Zero gate voltage drain current
Vds=48V, Vgs=0V
Idss
Vds=40V, Vgs=0V, Ta=125°C
1
μA
10
Gate-body leakage current
Igss Vds=0V, Vgs=±20V
±250 nA
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=250μA
1.0 1.5 3.0 V
On-state drain current
Id(on) Vgs=10V, Vds=10V
100
A1
Static drain-source on-resistance
Vgs=10V, Id=20A
Rds(on)
Vgs=4.5V, Id=12A
22.3 28.0
mΩ 1
28.0 38.0
Forward transconductance
Gfs Vds=5V, Id=20A
25
S1
Diode forward voltage
Vsd If=20A, Vgs=0V
1.3 V 1
Max. body-diode continuous current Is
30 A
DYNAMIC PARAMETERS
Input capacitance
Ciss
1500
pF
Output capacitance
Coss Vgs=0V, Vds=25V, f=1MHz
168
pF
Reverse transfer capacitance
Crss
106
pF
Gate resistance
Rg Vgs=0V, Vds=0V, f=1MHz
1.3
Ω
SWITCHING PARAMETERS
Total gate charge
Qg
27.4
nC 2
Gate-source charge
Qgs Vgs=10V, Vds=30V, Id=20A
6.1
nC 2
Gate-drain charge
Qgd
5.8
nC 2
Turn-on delay time
td(on)
8
ns 2
Turn-on rise time
tr Vgs=10V, Vds=30V
6
ns 2
Turn-off delay time
td(off) Id=20A, Rgen=6Ω
29
ns 2
Turn-off fall time
tf
6
ns 2
Reverse recovery time
Reverse recovery charge
trr
If=20A, dIf/dt=100A/μs
Qrr
41
ns
46
nC
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4-2