ELM588822A-S Datasheet, PDF (1/5 Pages) ELM Electronics – Dual N-channel MOSFET

Dual N-channel MOSFET ^{(common drain)}
ELM588822A-S
■General description
ELM588822A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=20V
• Id=7.2A
• Rds(on) = 28mΩ (Vgs=4.5V)
• Rds(on) = 32mΩ (Vgs=2.5V)
• Rds(on) = 45mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Tc=25°C
Tc=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
20
V
±12
V
7.2
A
4.8
20
A
2.8
W
1.8
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Typ.
Rθja
Max.
62.5
Unit
°C/W
■Pin configuration
■Circuit
TSSOP-8(TOP VIEW)
Pin No.
Pin name
D1
D2
1
DRAIN1/DRAIN2
1
8
2
SOURCE1
2
7
3
6
3
SOURCE1
G1
G2
4
5
4
GATE1
5
GATE2
6
SOURCE2
S1
S2
7
SOURCE2
8
DRAIN1/DRAIN2
5-1