ELM57801GA-S Datasheet, PDF (1/5 Pages) ELM Electronics – Dual P-channel MOSFET

Dual P-channel MOSFET
ELM57801GA-S
■General description
ELM57801GA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=-20V
• Id=-1.4A
• Rds(on) < 600mΩ (Vgs=-4.5V)
• Rds(on) < 800mΩ (Vgs=-2.5V)
• Rds(on) < 1600mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Tc=25°C
Tc=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
-20
V
±12
V
-1.4
A
-1.0
-6
A
0.3
W
0.2
-55 to 150
°C
■Pin configuration
SC-70-6(TOP VIEW)
6
5
4
1
2
3
Pin No.
1
2
3
4
5
6
Pin name
SOURCE1
GATE1
DRAIN2
SOURCE2
GATE2
DRAIN1
■Circuit
D1
D2
G1
G2
S1
S2
5-1