ELM57800GA-S Datasheet, PDF (1/5 Pages) ELM Electronics – Dual N-channel MOSFET

Dual N-channel MOSFET
ELM57800GA-S
■General description
ELM57800GA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=20V
• Id=1.8A
• Rds(on) < 280mΩ (Vgs=4.5V)
• Rds(on) < 340mΩ (Vgs=2.5V)
• Rds(on) < 580mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
20
V
±12
V
1.8
A
1.2
6
A
0.3
W
0.2
-55 to 150
°C
■Pin configuration
SC-70-6(TOP VIEW)
6
5
4
1
2
3
Pin No.
1
2
3
4
5
6
Pin name
SOURCE1
GATE1
DRAIN2
SOURCE2
GATE2
DRAIN1
■Circuit
D1
D2
G1
G2
S1
S2
5-1