ELM56801EA-S Datasheet, PDF (1/5 Pages) ELM Electronics – Dual P-channel MOSFET

Dual P-channel MOSFET
ELM56801EA-S
■General description
ELM56801EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=-20V
• Id=-3.2A, Rds(on)=100mΩ (Vgs=-4.5V)
• Id=-2.6A, Rds(on)=135mΩ (Vgs=-2.5V)
• Id=-1.5A, Rds(on)=190mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Tc=25°C
Tc=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
-20
V
±12
V
-3.2
A
-2.6
-20
A
2.0
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Typ.
Steady-state
Rθja
Max.
120
Unit
°C/W
■Pin configuration
SOT-26(TOP VIEW)
654
123
Pin No.
1
2
3
4
5
6
Pin name
GATE1
SOURCE2
GATE2
DRAIN2
SOURCE1
DRAIN1
■Circuit
D1
D2
G1
G2
S1
S2
5-1