ELM56800EA-S Datasheet, PDF (1/5 Pages) ELM Electronics – Dual N-channel MOSFET

Dual N-channel MOSFET
ELM56800EA-S
■General description
ELM56800EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=30V
• Id=3.6A
• Rds(on) = 70mΩ (Vgs=10V)
• Rds(on) = 78mΩ (Vgs=4.5V)
• Rds(on) = 95mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current(Tj=150°C)
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Tc=25°C
Tc=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
30
V
±12
V
3.6
A
2.2
20
A
2.0
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol Typ.
Rθja
Max.
120
Unit Note
°C/W
■Pin configuration
SOT-26(TOP VIEW)
6
5
4
1
2
3
Pin No.
1
2
3
4
5
6
Pin name
GATE1
SOURCE2
GATE2
DRAIN2
SOURCE1
DRAIN1
■Circuit
D1
D2
G1
G2
S1
S2
5-1