ELM544933A-N Datasheet, PDF (1/5 Pages) ELM Electronics – Dual P-channel MOSFET

Dual P-channel MOSFET
ELM544933A-N
http://www.elm-tech.com
■General description
■Features
ELM544933A-N uses advanced trench technology to
• Vds=-20V
provide excellent Rds(on), low gate charge and low gate
• Id=-6.5A
resistance.
• Rds(on) = 40mΩ (Vgs=-4.5V)
• Rds(on) = 54mΩ (Vgs=-2.5V)
• Rds(on) = 75mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Drain-source voltage
Gate-source voltage
Parameter
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Tc=25°C
Tc=70°C
Ta=25°C. Unless otherwise noted.
Symbol
Limit
Unit
Vds
-20
V
Vgs
±12
V
-6.5
Id
A
-2.5
Idm
-18
A
2.8
Pd
W
1.8
Tj, Tstg
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Typ.
Rθja
Max.
62.5
Unit
°C/W
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE1
GATE1
SOURCE2
GATE2
DRAIN2
DRAIN2
DRAIN1
DRAIN1
■Circuit
Rev.1.0
5 -1