ELM544599A-N Datasheet, PDF (1/8 Pages) ELM Electronics – Complementary MOSFET

Complementary MOSFET
ELM544599A-N
■General Description
ELM544599A-N uses advanced trench technology
to provide excellent Rds(on) and low gate charge.
■Features
• N-channel
Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V)
Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V)
• P-channel
Vds=-40V, Id=-7.2A, Rds(on)=42mΩ(Vgs=-10V)
Vds=-40V, Id=-6.2A, Rds(on)=60mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Tc=25°C
Tc=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj,Tstg
Ta=25°C. Unless otherwise noted.
N-ch (Max.) P-ch (Max.) Unit
40
-40
V
±20
±20
V
8.0
-7.2
A
6.0
-6.2
25
-25
A
2.8
2.8
W
1.8
1.8
-55 to 150
-55 to 150
°C
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol Device Typ.
Steady-state Rθja
N-ch
Steady-state Rθja
P-ch
Max.
62.5
62.5
Unit
°C/W
°C/W
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE1
GATE1
SOURCE2
GATE2
DRAIN2
DRAIN2
DRAIN1
DRAIN1
■Circuit
• N-ch
• P-ch
D1
D2
G1
G2
S1
S2
8-1