ELM529575A-S Datasheet, PDF (1/5 Pages) ELM Electronics – Single P-channel MOSFET

Single P-channel MOSFET
ELM529575A-S
■General description
ELM529575A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=-60V
• Id=-18A
• Rds(on) = 68mΩ (Vgs=-10V)
• Rds(on) = 78mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Single pulse avalanche current
Avalanche energy
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
L=0.1mH
Tc=25°C
Tc=70°C
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
-60
V
±20
V
-18
A
-12
-50
A
-12
A
23
mJ
40
W
15
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Typ.
Rθja
Max.
62.5
Unit
°C/W
■Pin configuration
TO-252-3(TOP VIEW)
TAB
2
1
3
Pin No.
1
2
3
Pin name
GATE
DRAIN
SOURCE
■Circuit
D
G
S
5-1