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ELM36800EA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Dual N-channel MOSFET | |||
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Dual N-channel MOSFET
ELM36800EA-S
â General description
ELM36800EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
â Features
⢠Vds=30V
⢠Id=3.5A
⢠Rds(on) < 68mΩ (Vgs=10V)
⢠Rds(on) < 98mΩ (Vgs=4.5V)
â Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±20
V
3.5
A
2.8
10
A
3
1.15
W
0.73
-55 to 150
°C
â Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
Maximum junction-to-ambient
tâ¤10s
Rθja
Steady-state
Maximum junction-to-lead
Steady-state Rθjl
Max.
110
150
80
Unit Note
°C/W
°C/W
°C/W
â Pin configuration
SOT-26(TOP VIEW)
6
5
4
1
2
3
Pin No.
1
2
3
4
5
6
Pin name
GATE1
SOURCE2
GATE2
DRAIN2
SOURCE1
DRAIN1
â Circuit
D1
D2
G1
G2
S1
S2
4-1
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