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ELM36800EA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Dual N-channel MOSFET
Dual N-channel MOSFET
ELM36800EA-S
■General description
ELM36800EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=30V
• Id=3.5A
• Rds(on) < 68mΩ (Vgs=10V)
• Rds(on) < 98mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±20
V
3.5
A
2.8
10
A
3
1.15
W
0.73
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
Maximum junction-to-ambient
t≤10s
Rθja
Steady-state
Maximum junction-to-lead
Steady-state Rθjl
Max.
110
150
80
Unit Note
°C/W
°C/W
°C/W
■Pin configuration
SOT-26(TOP VIEW)
6
5
4
1
2
3
Pin No.
1
2
3
4
5
6
Pin name
GATE1
SOURCE2
GATE2
DRAIN2
SOURCE1
DRAIN1
■Circuit
D1
D2
G1
G2
S1
S2
4-1