ELM36403EA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single P-channel MOSFET

Single P-channel MOSFET
ELM36403EA-S
■General description
ELM36403EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=-30V
• Id=-5A
• Rds(on) < 51mΩ (Vgs=-10V)
• Rds(on) < 85mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±20
V
-5.0
A
-4.2
-20
A
3
2.0
W
1.4
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
Maximum junction-to-ambient
t≤5s
Rθja
Steady-state
Maximum junction-to-lead
Steady-state Rθjl
Max.
62.5
110.0
50.0
Unit Note
°C/W
°C/W
°C/W
■Pin configuration
SOT-26(TOP VIEW)
6
5
4
1
2
3
Pin No.
1
2
3
4
5
6
Pin name
DRAIN
DRAIN
GATE
SOURCE
DRAIN
DRAIN
■Circuit
D
G
S
4-1