ELM36400EA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM36400EA-S
■General description
ELM36400EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=30V
• Id=7A
• Rds(on) < 27mΩ (Vgs=10V)
• Rds(on) < 40mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=100°C
Pulsed drain current
Power dissipation
Tc=25°C
Tc=100°C
Junction and storage temperature range
Symbol
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
±20
V
7
A
5
20
A
3
1.6
W
1.2
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-case
Steady-state Rθjc
Maximum junction-to-ambient
Steady-state Rθja
Max.
30
78
Unit Note
°C/W
°C/W
■Pin configuration
SOT-26(TOP VIEW)
6
5
4
1
2
3
Pin No.
1
2
3
4
5
6
Pin name
DRAIN
DRAIN
GATE
SOURCE
DRAIN
DRAIN
■Circuit
D
G
S
4-1