ELM35601KA-S Datasheet, PDF (1/7 Pages) ELM Technology Corporation – Complementary MOSFET

Complementary MOSFET
ELM35601KA-S
■General Description
ELM35601KA-S uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
■Features
N-channel
• Vds=40V
• Id=7A
• Rds(on) < 28mΩ(Vgs=10V)
• Rds(on) < 49mΩ(Vgs=5V)
P-channel
Vds=-40V
Id=-5.5A
Rds(on) < 48mΩ(Vgs=-10V)
Rds(on) < 85mΩ(Vgs=-5V)
■Maximum Absolute Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj,Tstg
Ta=25°C. Unless otherwise noted.
N-ch (Max.) P-ch (Max.) Unit Note
40
-40
V
±20
±20
V
7.0
-5.5
A
6.0
-4.5
50
-50
A3
3.0
3.0
W
2.1
2.1
-55 to 150
-55 to 150 °C
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-case
Maximum junction-to-ambient
Maximum junction-to-case
Symbol Device
Typ.
Rθja
N-ch
Rθjc
N-ch
Rθja
P-ch
Rθjc
P-ch
Max.
42
6
42
6
Unit Note
°C/W
°C/W
°C/W
°C/W
■Pin configuration
TO-252-4(TOP VIEW)
TAB
12 34
Pin No.
1
2
3
4
TAB
Pin name
SOURCE1
GATE1
SOURCE2
GATE2
DRAIN1/DRAIN2
■Circuit
• N-ch
D1
• P-ch
D2
G1
G2
S1
S2
7-1