ELM34803AA-N Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Dual P-channel MOSFET

Dual P-channel MOSFET
ELM34803AA-N
■General description
ELM34803AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=-30V
• Id=-8A
• Rds(on) < 22mΩ (Vgs=-10V)
• Rds(on) < 34mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±25
V
-8
A
-6
-40
A
3
-30
A
45
mJ
2.00
W
1.28
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol Typ.
Rθja
Max.
62.5
Unit Note
°C/W
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE1
GATE1
SOURCE2
GATE2
DRAIN2
DRAIN2
DRAIN1
DRAIN1
■Circuit
D1
D2
G1
G2
S1
S2
4 -1