ELM34423AA-N Datasheet, PDF (1/4 Pages) ELM Electronics – Single P-channel MOSFET

Single P-channel MOSFET
ELM34423AA-N
■General description
ELM34423AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance. Internal ESD protection is included.
■Features
• Vds=-30V
• Id=-8A
• Rds(on) < 20Ω (Vgs=-10V)
• Rds(on) < 35Ω (Vgs=-4.5V)
• ESD protected
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±20
V
-8.0
A
5
-6.5
-50
A
3, 5
-30
A
46
mJ
2.0
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol Typ.
Rθja
Max.
60
Unit Note
°C/W
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
■Circuit
D
G
S
4-1