ELM34403AA-N Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single P-channel MOSFET

Single P-channel MOSFET
ELM34403AA-N
■General description
ELM34403AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=-55V
• Id=-4.5A
• Rds(on) < 80mΩ (Vgs=-10V)
• Rds(on) < 150mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-55
V
±20
V
-4.5
A
-3.5
-20
A
3
2.5
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
Steady-state Rθja
Max.
50
Unit Note
°C/W
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
■Circuit
D
G
S
4-1