ELM33416CA-S Datasheet, PDF (1/4 Pages) ELM Electronics – Single N-channel MOSFET

Single N-channel MOSFET
ELM33416CA-S
■General description
ELM33416CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=100V
• Id=1.3A
• Rds(on) < 230mΩ (Vgs=10V)
• Rds(on) < 240mΩ (Vgs=5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=100°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Power dissipation
Tc=25°C
Tc=100°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
100
V
±20
V
1.3
A
0.8
18
A
3
18
A
16.5
mJ
0.75
W
0.30
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol Typ.
Rθja
Max.
166
Unit Note
°C/W
■Pin configuration
SOT-23(TOP VIEW)
3
1
2
Pin No.
1
2
3
Pin name
GATE
SOURCE
DRAIN
■Circuit
D
G
S
4-1