ELM321604A-S Datasheet, PDF (1/4 Pages) ELM Electronics – Single P-channel MOSFET

Single P-channel MOSFET
ELM321604A-S
■General description
ELM321604A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=-40V
• Id=-43A
• Rds(on) < 16mΩ (Vgs=-10V)
• Rds(on) < 20mΩ (Vgs=-7V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-40
V
±20
V
-43
A
-34
-130
A
3
-40.8
A
83
mJ
50
W
32
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-case
Steady-state Rθjc
Maximum junction-to-ambient
Steady-state Rθja
Max.
2.5
75.0
Unit Note
°C/W
°C/W
■Pin configuration
TO-252-3(TOP VIEW)
TAB
2
1
3
Pin No.
1
2
3
Pin name
GATE
DRAIN
SOURCE
■Circuit
D
G
S
4-1