ELM26400EA-S Datasheet, PDF (1/4 Pages) ELM Electronics – Single N-channel MOSFET

Single N-channel MOSFET
ELM26400EA-S
■General description
ELM26400EA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 4.5V.
http://www.elm-tech.com
■Features
• Vds=30V
• Id=6.5A
• Rds(on) ≤ 24mΩ (Vgs=10V)
• Rds(on) ≤ 34mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Single Pulse Avalanche Energy
Single Pulse Avalanched Current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=100°C
Tc=25°C
Symbol
Vds
Vgs
Id
Idm
Eas
Ias
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit Note
30
V
±20
V
6.5
A
4.1
26
A
1
32
mJ
2
8
A
2
1.56
W/°C
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol Typ.
Rθja
-
Max.
80
Unit Note
°C/W
■Pin configuration
SOT-26(TOP VIEW)
6
5
4
1
2
3
Pin No.
1
2
3
4
5
6
Pin name
GATE
SOURCE
GATE
DRAIN
SOURCE
DRAIN
■Circuit
D
G
S
Rev.1.0
4-1