ELM14702AA-N Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single N-channel MOSFET with schottky diode

Single N-channel MOSFET with schottky diode
ELM14702AA-N
■General description
ELM14702AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
■Features
• Vds=30V
• Id=11A
• Rds(on) < 16mΩ (Vgs=10V)
• Rds(on) < 25mΩ (Vgs=4.5V)
Schottky diode
• Vds(V)=30V
• If=3A
• Vf < 0.5V@1A
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Schottky reverse voltage
Continuous forward current
Ta=25°C
Ta=70°C
Pulsed diode forward current
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Vka
If
Ifm
Pd
Tj, Tstg
MOSFET
30
±20
11.0
9.3
50
3
2
-55 to 150
Ta=25°C. Unless otherwise noted.
Schottky Unit Note
V
V
A
1
A
2
30
V
4.4
3.2
A
1
30
A
2
3
2
W
-55 to 150 °C
■Thermal characteristics
Parameter (MOSFET)
Symbol Typ.
Maximum junction-to-ambient
Maximum junction-to-ambient
t≤10s
Steady-state
Rθja
31
59
Maximum junction-to-lead
Steady-state Rθjl
16
Parameter (Schottky)
Symbol Typ.
Maximum junction-to-ambient
Maximum junction-to-ambient
t≤10s
Steady-state
Rθja
36
67
Maximum junction-to-lead
Steady-state Rθjl
25
Max.
40
75
24
Max.
40
75
30
Unit Note
°C/W
°C/W
1
°C/W 3
Unit Note
°C/W
°C/W
1
°C/W 3
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
■Circuit
D
K
G
S
A
4-1