ELM14614AA-N Datasheet, PDF (1/7 Pages) ELM Technology Corporation – Complementary MOSFET

Complementary MOSFET
ELM14614AA-N
■General Description
■Features
ELM14614AA-N uses advanced trench N-channel
P-channel
technology to provide excellent Rds(on) _{• Vds=40V}
and low gate charge.
• Id=6A(Vgs=10V)
Vds=-40V
Id=-5A(Vgs=-10V)
• Rds(on) < 31mΩ(Vgs=10V) Rds(on) < 45mΩ(Vgs=-10V)
• Rds(on) < 45mΩ(Vgs=4.5V) Rds(on) < 63mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Ta=25°C. Unless otherwise noted.
Parameter
Symbol N-ch (Max.) P-ch (Max.) Unit Note
Drain-source voltage
Vds
40
-40
V
Gate-source voltage
Vgs
±20
±20
V
Ta=25°C
6.0
-5.0
Continuous drain current
Ta=70°C
Id
5.0
-4.0
A1
Ta=85°C
4.5
-3.8
Pulsed drain current
Idm
20
-20
A2
Avalanche current
Iar
12
14
A
Single pulse avalanche energy L=0.3mH
Eas
22
29
mJ
Tc=25°C
2.00
2.00
Power dissipation
Tc=70°C
Pd
1.28
1.28
W
Tc=85°C
1.05
1.05
Junction and storage temperature range
Tj,Tstg -55 to 150
-55 to 150 °C
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
Steady-state
Steady-state
t≤10s
Steady-state
Steady-state
Symbol
Rθja
Rθjl
Rθja
Rθjl
Device
N-ch
P-ch
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE2
GATE2
SOURCE1
GATE1
DRAIN1
DRAIN1
DRAIN2
DRAIN2
Typ. Max. Unit Note
48.0 62.5 °C/W
1
74.0 110.0 °C/W
35.0 50.0 °C/W 3
48.0 62.5 °C/W
1
74.0 110.0 °C/W
35.0 50.0 °C/W 3
■Circuit
• N-ch
D2
• P-ch
D1
G2
G1
S2
S1
7-1