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ELM14430AA-N Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single N-channel MOSFET
Single N-channel MOSFET
ELM14430AA-N
■General description
ELM14430AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=30V
• Id=18A (Vgs=10V)
• Rds(on) < 5.5mΩ (Vgs=10V)
• Rds(on) < 7.5mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±20
V
18
A
1
15
80
A
2
3.0
W
2.1
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
t≤10s
31
Rθja
Maximum junction-to-ambient
Steady-state
59
Maximum junction-to-lead
Steady-state Rθjl
16
Max.
40
75
24
Unit Note
°C/W
1
°C/W
°C/W
3
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
■Circuit
D
G
S
4-1