ELM14354AA-N Datasheet, PDF (1/5 Pages) ELM Electronics – Single N-channel MOSFET

Single N-channel MOSFET
ELM14354AA-N
■General description
ELM14354AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=30V
• Id=23A (Vgs=10V)
• Rds(on) < 3.7mΩ (Vgs=10V)
• Rds(on) < 5.3mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=100°C
Pulsed drain current
Avalanche current
Repetitive avalanche energy
L=0.1mH
Vds Spike
100ns
Power dissipation
Tc=25°C
Tc=100°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Vspike
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±20
V
23
A
14
174
A
3
37
A
3
68
mJ
3
36
V
3.1
W
2
1.2
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
t≤10s
31
Rθja
Maximum junction-to-ambient
Steady-state
59
Maximum junction-to-lead
Steady-state Rθjl
16
Max.
40
75
24
Unit Note
°C/W
1
°C/W 1, 4
°C/W
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
■Circuit
D
G
S
5- 1