ELM14912AA-N Datasheet, PDF (7/7 Pages) ELM Technology Corporation – Dual N-channel MOSFET with schottky diode

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㪜㪣㪤㪈㪋㪐㪈㪉㪘㪘㪄㪥
5
Vds=15V
Id=7A
4
3
2
1
0
0
1
2
3
4
5
6
Q_g (nC)
Figure 7: Gate-Charge Characteristics
750
f=1MHz
Vgs=0V
C_iss
500
250
C_oss
C_rss
0
0
5
10
15
20
25
30
Vds (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
Tj(max)=150°C, Ta=25°C
Rds(on)
limited
1ms ^100Ps
10Ps
10ms
0.1s
1.0
0.1
0.1
1s
10s
DC
1
10
100
Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
40
Tj(max)=150°C
Ta=25°C
30
20
10
0
0.001 0.01 0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note 5)
10
D=T_on/T
T_j,pk=T_a+P_dm.Z_Tja.R_Tja
R_Tja=62.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
T_on
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
㪎㪄 㪎