ELM14620AA-N Datasheet, PDF (3/7 Pages) ELM Technology Corporation – Complementary MOSFET

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30
10V
5V
25
20
6V
15
4.5V
4V
10
5
0
0
3.5V
Vgs=3V
1
2
3
4
5
Vds (Volts)
Figure 1: On-Region Characteristics
20
Vds=5V
16
12
8
125°C
4
25°C
0
1.5
2
2.5
3
3.5
4
4.5
Vgs (Volts)
Figure 2: Transfer Characteristics
35
1.6
Vgs=4.5V
Vgs=10V
1.4
Id=7.2A
30
V_GS=10V, V_DS=15V, I_D=7.4A
1.2
Vgs=4.5V
25
Id=5A
1
V_G^V_S^g=^s1⁼0¹⁰V^V, V_DS=15V, R_L=2.0:, R_GEN=3:
20
0.8
15
0
5
10 ^IF=7.4A1^,5^dI/dt=1002^A0^/Ps
Id (A) ^{IF=7.4A, dI/dt=100A/Ps}
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.6
-50
-25 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
1.0E+01
Id=7.2A
50
1.0E+00
1.0E-01
40
125°C
125°C
1.0E-02
HIS PR3O0DUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR2U5S°CES AS CRITICAL
OMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AU1.T0HEO-0R3IZED. AOS DOES NOT ASSUME ANY LIABILITY AR
UT OF2S0UCH APPLICATIONS OR USES OF ITS PRODUCTS.
UNCTIONS AND RELIABILITY WITHOUT NOTICE. _25°C
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1.0E-04
10
2
4
6
8
10
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body-Diode Characteristics
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