ELM3D0603A-S Datasheet, PDF (2/5 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM3D0603A-S
■Electrical characteristics
Ta=25°C. Unless otherwise noted.
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V
30
V
Zero gate voltage drain current
Vds=24V, Vgs=0V
Idss
Vds=20V, Vgs=0V, Ta=55°C
1
μA
10
Gate-body leakage current
Igss Vds=0V, Vgs=±20V
±100 nA
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=250μA
1.0 1.6 3.0 V
Static drain-source on-resistance
Vgs=10V, Id=30A
Rds(on)
Vgs=4.5V, Id=15A
3.8 6.0
mΩ 1
5.4 9.0
Forward transconductance
Gfs Vds=15V, Id=17A
50
S1
Diode forward voltage
Vsd If=30A, Vgs=0V
1.2 V 1
Max. body-diode continuous current Is
2A
DYNAMIC PARAMETERS
Input capacitance
Ciss
2160
pF
Output capacitance
Coss Vgs=0V, Vds=15V, f=1MHz
474
pF
Reverse transfer capacitance
Crss
309
pF
Gate resistance
Rg Vgs=0V, Vds=0V, f=1MHz
1.4
Ω
SWITCHING PARAMETERS
Total gate charge (Vgs=10V)
Total gate charge (Vgs=4.5V)
Gate-source charge
Qg
Vds=15V, Id=30A
Qgs
39
nC 2
18
nC 2
10
nC 2
Gate-drain charge
Qgd
6
nC 2
Turn-on delay time
td(on)
26
ns 2
Turn-on rise time
Turn-off delay time
tr _{Vds=15V, RL=1.5Ω, Id=10A,}
18
ns 2
td(off) ^{Vgs=10V, Rgen=6Ω}
40
ns 2
Turn-off fall time
tf
16
ns 2
Body diode reverse recovery time
trr If=10A, dIf/dt=100A/μs
35
ns
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
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