ELM3C1350A Datasheet, PDF (2/4 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM3C1350A
■Electrical characteristics
Ta=25°C. Unless otherwise noted.
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V
500
V
Zero gate voltage drain current
Vds=500V, Vgs=0V, Ta=25°C
Idss
Vds=500V, Vgs=0V, Ta=100°C
25
μA
250
Gate-body leakage current
Igss Vds=0V, Vgs=±30V
±100 nA
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=250μA
2.5
4.5 V
Static drain-source on-resistance Rds(on) Vgs=10V, Id=6.5A
0.40 0.52 Ω 1
Forward transconductance
Gfs Vds=40V, Id=6A
8.5
S1
Diode forward voltage
Vsd If=4A, Vgs=0V
1.7 V 1
Max. body-diode continuous current Is
13 A 3
Pulsed current
Ism
45 A 3
DYNAMIC PARAMETERS
Input capacitance
Ciss
2185
pF
Output capacitance
Coss Vgs=0V, Vds=25V, f=1MHz
204
pF
Reverse transfer capacitance
Crss
59
pF
SWITCHING PARAMETERS
Total gate charge
Qg
40.0
nC 2
Gate-source charge
Qgs Vgs=10V, Vds=250V, Id=6A
11.5
nC 2
Gate-drain charge
Qgd
12.5
nC 2
Turn-on delay time
td(on)
30
ns 2
Turn-on rise time
Turn-off delay time
tr
25
Vds=250V, Id=6A, Rgen=4.7Ω
td(off)
43
ns 2
ns 2
Turn-off fall time
tf
15
ns 2
Body diode reverse recovery time
Body diode reverse recovery charge
trr _{If=12A, dIf/dt=100A/μs}
Qrr ^Vgs=0V
320.0
ns
4.9
μC
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Limited only by maximum temperature allowed.
5. Vdd=60V, starting Tj=25°C.
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