ELM7SH00MB-EL Datasheet, PDF (1/3 Pages) ELM Technology Corporation – HIGH SPEED CMOS LOGIC IC ELM7SH00xB 2-input NAND gate

HIGH SPEED CMOS LOGIC IC ELM7SH00xB 2-input NAND gate
■General description
ELM7SH00xB is CMOS 2-input NAND gate which is suitable for battery-operated devices because of its ultra
high speed opeartion performed by low voltage. The low power consumption contributes to longer battery life,
which makes long time operation of devices possible. The internal circuit which provides high noise immunity
and stable output is composed of 3 stages, including buffered output.
■Features
• Same electrical characteristic and high speed operation as 74VHC series
• Low consumption current : Idd=1.0µA(Max.)(Top=25°C)
• Wide power voltage range : 2.0V to 5.5V
• Wide input voltage range
: Vih=5.5V(Max.)(Vdd=0 to 5.5V)
• High speed
: Tpd=2ns(Typ.)(Vdd=5.0V)
• Small package
: SOT-25, SC-70-5(SOT-353)
• Same function and pin configuration as ELM7SxxB
■Application
• Cell phones
• Digital cameras
• Portable electrical appliances like PDA, etc.
• Computers and peripherals
• Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc.
• Modification inside print board, adjustment of timing, solution to noise
• Power voltage change from 5V to 3V
■Selection guide
ELM7SH00xB-EL
Symbol
a
Function
b
Package
c
Product version
d
Taping direction
00: 2-input NAND gate
M: SOT-25
T : SC-70-5(SOT-353)
B
EL: Refer to PKG file
ELM7SH 0 0 x B - EL
↑ ↑↑ ↑
a bc d
■Maximum absolute ratings
Parameter
Symbol
Limit
Unit
Power supply voltage
Vdd
-0.5 to +6.0
V
Input voltage
Vin
-0.5 to +6.0
V
Output voltage
Vout
-0.5 to Vdd+0.5
V
Input protection diode current
Iik
-20
mA
Output parasitic diode current
Iok
±20
mA
Output current
Iout
±25
mA
VDD/GND current
Idd, Ignd
±50
mA
Power dissipation
Pd
150
mW
Storage temperature
Tstg
-65 to +150
°C
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