ELM5K8471A-S Datasheet, PDF (1/5 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM5K8471A-S
■General description
ELM5K8471A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=60V
• Id=5.8A
• Rds(on) < 54mΩ (Vgs=10V)
• Rds(on) < 60mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current Tj=150°C
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Tc=25°C
Tc=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
60
V
±20
V
5.8
A
4.2
10
A
2.8
W
1.2
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Typ.
Rθja
Max.
120
Unit
°C/W
■Pin configuration
SOT-223(TOP VIEW)
1
2
3
Pin No.
1
2
3
Pin name
GATE
DRAIN
SOURCE
■Circuit
D
G
S
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